KSM9N25C/ksmf9n25c 250v n-channel mosfet general description these n-channel enhancement mode power field effect transistors are produced usi ng kersemi proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency switching dc/dc converters, switch mode power supplies, dc-ac converters for uninterrupted power supplies and motor controls. features ? 8.8a, 250v, r ds(on) = 0.43 ? @v gs = 10 v ? low gate charge ( typical 26.5 nc) ? low crss ( typical 45.5 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter KSM9N25C ksmf9n25c units v dss drain-source voltage 250 v i d drain current - continuous (t c = 25c) 8.8 8.8 * a - continuous (t c = 100c) 5.6 5.6 * a i dm drain current - pulsed (note 1) 35.2 35.2 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 285 mj i ar avalanche current (note 1) 8.8 a e ar repetitive avalanche energy (note 1) 7.4 mj dv/dt peak diode recovery dv/dt (note 3) 5.5 v/ns p d power dissipation (t c = 25c) 74 38 w - derate above 25c 0.59 0.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter KSM9N25C ksmf9n25c units r jc thermal resistance, junction-to-case 1.69 3.29 c / w r js thermal resistance, case-to-sink typ. 0.5 -- c / w r ja thermal resistance, junction-to-ambient 62.5 62.5 c / w to-220 to-220f { { { ? { { { ? s d g kersemi electroic co.,ltd. 2014-6-21 1 www.kersemi.com
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width li mited by maximum junction temperature 2. l = 5.9mh, i as = 8.8a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 8.8a, di/dt 300a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 250 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.30 -- v/c i dss zero gate voltage drain current v ds = 250 v, v gs = 0 v -- -- 10 a v ds = 200 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4.0 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 4.4 a -- 0.35 0.43 ? g fs forward transconductance v ds = 40 v, i d = 4.4 a (note 4) -- 7.0 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 545 710 pf c oss output capacitance -- 115 150 pf c rss reverse transfer capacitance -- 45.5 60 pf switching characteristics t d(on) turn-on delay time v dd = 125 v, i d = 8.8 a, r g = 25 ? (note 4, 5) -- 15 40 ns t r turn-on rise time -- 85 180 ns t d(off) turn-off delay time -- 90 190 ns t f turn-off fall time -- 65 140 ns q g total gate charge v ds = 200 v, i d = 8.8 a, v gs = 10 v (note 4, 5) -- 26.5 35 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 13.5 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 8.8 a i sm maximum pulsed drain-source diode forward current -- -- 35.2 a v sd drain-source diode forward voltage v gs = 0 v, i s = 8.8 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 8.8 a, di f / dt = 100 a/ s (note 4) -- 218 -- ns q rr reverse recovery charge -- 1.58 -- c KSM9N25C/ksmf9n25c 2014-6-21 2 www.kersemi.com
0 5 10 15 20 25 30 0 2 4 6 8 10 12 v ds = 125v v ds = 50v v ds = 200v note : i d = 8.8a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 notes : 1. v gs = 0v 2. 250 s pulse test 25 i dr , reverse drain current [a] v sd , source-drain voltage [v] 0102030 0.00 0.25 0.50 0.75 1.00 1.25 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 246810 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : 1. v ds = 40v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] typical characteristics figure 5. capacitance characteristics fi gure 6. gate charge characteristics figure 3. on-resistance variation vs drain current and gate voltage figure 4. body diode forward voltage variation with source current and temperature figure 2. transfer characteristics figure 1. on-region characteristics KSM9N25C/ksmf9n25c 2014-6-21 3 www.kersemi.com
10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 s 10 ms 100 s dc 1 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 ms 100 s dc 1 ms operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 i d , drain current [a] t c , case temperature [ ] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 4.4 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] typical characteristics (continued) figure 9-1. maximum safe operating area for fqp9n25c figure 10. maximum drain current vs case temperature figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature figure 9-2. maximum safe operating area for fqpf9n25c KSM9N25C/ksmf9n25c 2014-6-21 4 www.kersemi.com
10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n ote s : 1. z jc (t) = 3.29 /w m ax. 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) sin g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 n otes : 1. z jc (t) = 1.6 9 /w m ax. 2. d uty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] typical characteristics (continued) figure 11-1. transient therma l response curve for fqp9n25c figure 11-2. transient therma l response cur ve for fqpf9n25c t 1 p dm t 2 t 1 p dm t 2 KSM9N25C/ksmf9n25c 2014-6-21 5 www.kersemi.com
gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut charge v gs 10v q g q gs q gd 3ma v gs dut v ds 300nf 50k 200nf 12v same type as dut v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d(on) t r t on t off t d(off) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t) i d (t) time 10v dut r g l l i d i d t p KSM9N25C/ksmf9n25c 2014-6-21 6 www.kersemi.com
peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period -------------------------- KSM9N25C/ksmf9n25c 2014-6-21 7 www.kersemi.com
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